New Resin Materials for High Power Embedding

The next generation of switches for power electronics is based upon Wide Band Gap semiconductors (WBG), e.g. GaN or SiC. These materials are supporting the possibility of higher switching currents and high frequency applications. Wide band gap semiconductors enable high voltage and high temperature...

Full description

Saved in:
Bibliographic Details
Main Authors: Guyenot, M., Mager, C., Birkhold, A., Ratchev, R., Khoshamouz, A., Gottwald, T., Kreuer, S.
Format: Conference Proceeding
Language:English
Subjects:
Copper
Embedding
GaN
High Power Electronics
Lead
Microassembly
PCB
Power electronics
Reliability
Resin Material
Resins
SiC
Thermal conductivity
WBG
wide bandgap
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The next generation of switches for power electronics is based upon Wide Band Gap semiconductors (WBG), e.g. GaN or SiC. These materials are supporting the possibility of higher switching currents and high frequency applications. Wide band gap semiconductors enable high voltage and high temperature applications. Power electronics need an optimized low inductive commutation cell for reducing the switching losses. For these reasons a bond-less PCB embedding technology was developed. But so far, a compatible high temperature resin material wasn't available and ceramics or lead frame solutions are state of the art. The present work shows the first results of a new resin material with a Tg > 200°C (~400°F) in combination with a high temperature PCB (Printed Circuit Board) embedding technology. Based on the resin material properties, the possibility of SiC and GaN embedding into the new resin will be discussed and first test results will be shown.
ISSN:2377-5726
DOI:10.1109/ECTC.2017.164