New Insights into the Amplitude of Random Telegraph Noise in Nanoscale MOS Devices

Amplitude distribution of random telegraph noise (RTN) in nanoscale CMOS technology is an open question, with both lognormal and exponential distributions widely reported in literatures. In this paper, we experimentally clarified the underlying reasons for the first time, and revealed that the trap...

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Bibliographic Details
Main Authors: Zexuan Zhang, Shaofeng Guo, Xiaobo Jiang, Runsheng Wang, Zhe Zhang, Peng Hao, Yangyuan Wang, Ru Huang
Format: Conference Proceeding
Language:English
Subjects:
amplitude distribution
coupling effect
Couplings
Data mining
Data models
Fitting
Hidden Markov models
MOS devices
Optical character recognition software
random telegraph noise (RTN)
Threshold voltage
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Summary:Amplitude distribution of random telegraph noise (RTN) in nanoscale CMOS technology is an open question, with both lognormal and exponential distributions widely reported in literatures. In this paper, we experimentally clarified the underlying reasons for the first time, and revealed that the trap coupling effect is the missing role behind the divergent measured results of RTN amplitude statistics. Based on the proposed new method, "clean" RTN data with and without coupling are successfully characterized. It is found that, with increasing of the coupling strength, the apparent distribution changes from exponential-like to lognormal-like; while the exact form is actually the two-stage lognormal distribution, originating from two categories of traps (located above the channel percolation paths or not). The results are essential for understanding of oxide trap coupling and modeling of RTN and are thus helpful for resilient circuit design against RTN in the future.
ISSN:1938-1891
DOI:10.1109/IRPS.2017.7936288