Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs

Mg doped p-type GaN films intended for UV photodetector applications have been produced by using laser-induced metalorganic chemical vapour deposition at a low temperature of 600/spl deg/C. The hole mobilities obtained are up to 40 cm/sup 2/ V/sup -1/ s/sup -1/ at room temperature without any post g...

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Bibliographic Details
Main Authors: Zuo, H.Y., Paterson, M.J., Goldys, E., Tansley, T.L., Afifuddin
Format: Conference Proceeding
Language:English
Subjects:
Chemical lasers
Chemical vapor deposition
Gallium arsenide
Gallium nitride
Laser theory
Masers
Plasma temperature
Semiconductor lasers
Silicon
Substrates
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Summary:Mg doped p-type GaN films intended for UV photodetector applications have been produced by using laser-induced metalorganic chemical vapour deposition at a low temperature of 600/spl deg/C. The hole mobilities obtained are up to 40 cm/sup 2/ V/sup -1/ s/sup -1/ at room temperature without any post growth treatment and rich photoluminescence spectra are typical. Three principal peaks at 2.95 eV, 2.6 eV and 2.2 eV were observed at low temperature with only those at 2.6 and 2.2 eV persisting at room temperature.
DOI:10.1109/COMMAD.1998.791619