10kV SiC MPS diodes for high temperature applications

This paper presents the device structure and characterization results of 10-kV 4H-SiC MPS diodes from room temperature to 200°C and compares them with JBS and PiN diodes fabricated on the same wafer. The results showed that SiC MPS diodes exhibit superior trade-off between forward voltage drop and l...

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Bibliographic Details
Main Authors: Yifan Jiang, Woongje Sung, Xiaoqing Song, Haotao Ke, Siyang Liu, Baliga, B. Jayant, Huang, Alex Q., Van Brunt, Edward
Format: Conference Proceeding
Language:English
Subjects:
4H-SiC
Computer simulation
Diodes
Electric potential
high temperature
high voltage
MPS diodes
P-i-n diodes
PIN diodes
Pins
Power semiconductor devices
Rectifiers
reverse recovery
Schottky diodes
Silicon carbide
Temperature
Temperature measurement
Tradeoffs
Voltage drop
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Summary:This paper presents the device structure and characterization results of 10-kV 4H-SiC MPS diodes from room temperature to 200°C and compares them with JBS and PiN diodes fabricated on the same wafer. The results showed that SiC MPS diodes exhibit superior trade-off between forward voltage drop and low reverse recovery charge with increasing temperature. Results of numerical simulation are shown to explain the behavior of MPS diodes.
ISSN:1946-0201
DOI:10.1109/ISPSD.2016.7520773