W -Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

We demonstrate W-band monolithic microwave integrated circuit (MMIC) amplifiers based on AlInN/GaN high electron mobility transistors (HEMTs) grown on Silicon. Our MMIC process was fully characterized to 110 GHz and a design kit generated to enable circuit design. A fabricated two-stage amplifier wi...

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Bibliographic Details
Published in:IEEE electron device letters 2016-08, Vol.37 (8), p.1025-1028
Main Authors: Marti, Diego, Lugani, Lorenzo, Carlin, Jean-Francois, Malinverni, Marco, Grandjean, Nicolas, Bolognesi, C. R.
Format: Article
Language:English
Subjects:
AlInN/GaN-on-Si
Amplifiers
Circuit design
Collapse
Devices
Gain
HEMTs
High electron mobility transistors
MMIC
MMIC (circuits)
MMICs
MODFETs
multistage amplifiers
Power amplifiers
Power generation
Semiconductor devices
Silicon
Silicon substrates
W-band
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Description
Summary:We demonstrate W-band monolithic microwave integrated circuit (MMIC) amplifiers based on AlInN/GaN high electron mobility transistors (HEMTs) grown on Silicon. Our MMIC process was fully characterized to 110 GHz and a design kit generated to enable circuit design. A fabricated two-stage amplifier with an output device width of 100 μm shows a saturated output power of 18.3 dBm and a gain of 8.2 dB at 94 GHz with input/output return losses of -10 dB or better from 90 to 100 GHz. A model confirmed by experimental data revealed that the performance is limited by current collapse and that a doubling of output power could be possible by resolving collapse limitations, showing the considerable potential of GaN-on-Si HEMT technology for low-cost millimeter-wave power electronic applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2581301