Complex for automated measurement and processing of BJTs and MOSFETs characteristics for extremal applications

The paper describes the features of an automated system for measurement and processing of electrical characteristics of BJTs and MOS transistors in the presence of thermal and radiation effects. Automation is made possible with employing of long measurement cables and a ramified scripting system. Th...

Full description

Saved in:
Bibliographic Details
Main Authors: Petrosyants, Konstantin O., Kharitonov, Igor A., Sambursky, Lev M., Ismail-zade, Mamed R.
Format: Conference Proceeding
Language:English
Subjects:
Automation
BJTs
Conferences
Electric variables measurement
Electronics
Integrated circuit modeling
measurement automation
Measuring instruments
model parameter extraction
MOS devices
MOSFET
MOSFETs
Radiation effects
Semiconductor device modeling
Semiconductor devices
Spice-models
Temperature measurement
test structures measurement
Transistors
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The paper describes the features of an automated system for measurement and processing of electrical characteristics of BJTs and MOS transistors in the presence of thermal and radiation effects. Automation is made possible with employing of long measurement cables and a ramified scripting system. The system is based on a set of measuring instruments, methods of measurements and processing of results for transistors of various types. Shown are the examples of the system usage for studying BJTs and MOSFETs, determining the SPICE-model parameters.
ISSN:2380-6516
DOI:10.1109/SIBCON.2016.7491840