High-Gain InAs Planar Avalanche Photodiodes

We report the fabrication of InAs planar avalanche photodiodes (APDs) using Be ion implantation. The planar APDs have a low background doping of 2 × 10 14 cm -3 and large depletion widths approaching 8 μm. The thick depletion width enabled a gain of 330 to be achieved at -26 V at 200 K without induc...

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Bibliographic Details
Published in:Journal of lightwave technology 2016-06, Vol.34 (11), p.2639-2644
Main Authors: White, Benjamin S., Sandall, Ian C., Zhou, Xinxin, Krysa, Andrey, McEwan, Kenneth, David, John P. R., Chee Hing Tan
Format: Article
Language:English
Subjects:
Avalanche photodiodes
Avalanches
Breakdown
Cadmium compounds
Dark current
Density
Depletion
Gain
II-VI semiconductor materials
Indium arsenides
Infrared detectors
Ion Implantation
Leakage current
Photodiodes
Surface fitting
Surface treatment
Temperature measurement
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Summary:We report the fabrication of InAs planar avalanche photodiodes (APDs) using Be ion implantation. The planar APDs have a low background doping of 2 × 10 14 cm -3 and large depletion widths approaching 8 μm. The thick depletion width enabled a gain of 330 to be achieved at -26 V at 200 K without inducing a significant tunneling current. No edge breakdown was observed within the APDs. The surface leakage current was found to be low with a gain normalized dark current density of 400 μAcm -2 at -20 V at 200 K.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2016.2531278