Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching

We demonstrate a nearly hysteresis-free sub60-mV/decade subthreshold swing (SS) operation in a p-type bulk metal-oxide-semiconductor field-effect transistor externally connected to a ferroelectric capacitor. The SS

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Bibliographic Details
Published in:IEEE electron device letters 2016-03, Vol.37 (3), p.245-248
Main Authors: Jo, Jaesung, Shin, Changhwan
Format: Article
Language:English
Subjects:
Capacitance
Capacitors
CMOS integrated circuits
ferroelectrics
Hysteresis
Logic gates
MOSFET
negative capacitance
steep switching
Voltage measurement
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Description
Summary:We demonstrate a nearly hysteresis-free sub60-mV/decade subthreshold swing (SS) operation in a p-type bulk metal-oxide-semiconductor field-effect transistor externally connected to a ferroelectric capacitor. The SS
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2523681