Robust ESD self-protected LDNMOSFET by an enhanced displacement-current triggering

A new enhanced displacement-current triggering by adding floating P+ diffusions at each source finger edge for the HV LDNMOSFET is proposed. Unlike the conventional substrate-triggered ESD protection technologies, it is very easy to implement the scheme by the layout without any special circuit and...

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Bibliographic Details
Main Authors: Tzu-Cheng Kao, Chen-Hsin Lien, Chien-Wei Chiu, Jian-Hsing Lee, Yen-Hsiang Lo, Chung-Yu Hung, Tsung-Yi Huang, Hung-Der Su
Format: Conference Proceeding
Language:English
Subjects:
Electrostatic discharges
Electrostatic-discharge (ESD)
Fingers
Human Body Model (HBM)
Layout
Logic gates
Machine Model (MM)
Robustness
Stress
Transistors
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Summary:A new enhanced displacement-current triggering by adding floating P+ diffusions at each source finger edge for the HV LDNMOSFET is proposed. Unlike the conventional substrate-triggered ESD protection technologies, it is very easy to implement the scheme by the layout without any special circuit and additional component. With a total width of 1600 μm, the HBM/ MM ESD performance improvements from 1.5 kV/ 150 V to 5.5 kV/ 450 V are achieved.
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2015.7112796