Simulations of Ge based optically controlled field effect transistors

We report on the simulation of Optically Controlled Field Effect Transistors (OCFET) based on a MOSFET with a Germanium gate. We study the static and dynamic characteristics of the device under near infrared light at 1.55 μm and investigate its operation as a digital inverter.

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Bibliographic Details
Main Authors: Rajamani, S., Sorianello, V., De Iacovo, A., Colace, L.
Format: Conference Proceeding
Language:English
Subjects:
Doping
Inverters
Logic gates
optical interconnects
Optical pulses
Optical receivers
Optical saturation
Optical sensors
optically controlled transistor
photodetectors
phototransistors
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Description
Summary:We report on the simulation of Optically Controlled Field Effect Transistors (OCFET) based on a MOSFET with a Germanium gate. We study the static and dynamic characteristics of the device under near infrared light at 1.55 μm and investigate its operation as a digital inverter.
ISSN:1949-2081
1949-209X
DOI:10.1109/Group4.2014.6961989