New perspective on lifetime prediction approach for BTI and HCI stressed device and its impact on circuit lifetime

Device and circuit lifetime is investigated for poly silicon gated MOSFET. New findings are: (1) More than 1 order lifetime is increased by quantifying the influence of poly depletion effect (PDE) and accumulated trap charge effect (ATCE). (2) We demonstrate that conventional lifetime model produce...

Full description

Saved in:
Bibliographic Details
Main Authors: Min-Chul Park, Gi-Yeong Yang, Joon-Sung Yang, Keun-Ho Lee, Young-Kwan Park
Format: Conference Proceeding
Language:English
Subjects:
circuit lifetime prediction
Degradation
HCI
Human computer interaction
Integrated circuit modeling
lifetime prediction
Logic gates
Mathematical model
NBTI
poly depletion
Reliability
trapping charge effect
Velocity measurement
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Device and circuit lifetime is investigated for poly silicon gated MOSFET. New findings are: (1) More than 1 order lifetime is increased by quantifying the influence of poly depletion effect (PDE) and accumulated trap charge effect (ATCE). (2) We demonstrate that conventional lifetime model produce an incorrect and reverse lifetime result for each degradation data measured by fast and slow method. (3) We evaluate the impact on circuit parameter, propagation delay time (t PD ), degradation in the light of new findings.
ISSN:1946-1569
1946-1577
DOI:10.1109/SISPAD.2014.6931632