Photoluminescence polarization and piezoelectric properties of InAs/InP quantum rod-nanowires

Purely wurtzite InAs/InP quantum rod nanowires (QRod-NWs) emitting at 1.55 μm have been successfully grown on silicon substrates by VLS assisted molecular beam epitaxy. Microphotoluminescence studies of single QRod-NWs reveal a highly linearly polarized emission parallel to the nanowires axis. This...

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Bibliographic Details
Main Authors: Anufriev, Roman, Chauvin, Nicolas, Barakat, Jean-Baptiste, Khmissi, Hammadi, Naji, Khalid, Patriarche, Gilles, Letartre, Xavier, Gendry, Michel, Bru-Chevallier, Catherine
Format: Conference Proceeding
Language:English
Subjects:
Anisotropic magnetoresistance
Electric fields
Indium phosphide
Nanowires
Photonics
Silicon
Substrates
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Summary:Purely wurtzite InAs/InP quantum rod nanowires (QRod-NWs) emitting at 1.55 μm have been successfully grown on silicon substrates by VLS assisted molecular beam epitaxy. Microphotoluminescence studies of single QRod-NWs reveal a highly linearly polarized emission parallel to the nanowires axis. This very high degree of linear polarization (> 0.9) can be explained by the photonic nature of the NW structure. Moreover, these QRod-NWs reveal a broad peak with an asymmetric lineshape at 10K. From experimental and theoretical studies, we conclude that this feature is a consequence of a piezoelectric field induced by the strained InAs QRod.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2014.6880556