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Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure
We have measured the low temperature and low field MR of a high mobility Ge 2DHG. The resulting MR curves demonstrate WL-like behavior at temperatures below 2K with WAL-like behavior appearing between 3K and 12K. Evidence of WAL has not been previously observed in Ge. We believe this transition to b...
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Main Authors: | , , , , , |
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Format: | Conference Proceeding |
Language: | English |
Subjects: | |
Online Access: | Request full text |
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Summary: | We have measured the low temperature and low field MR of a high mobility Ge 2DHG. The resulting MR curves demonstrate WL-like behavior at temperatures below 2K with WAL-like behavior appearing between 3K and 12K. Evidence of WAL has not been previously observed in Ge. We believe this transition to be the result of a summation of WL and WAL effects in the main conduction channel and parallel conduction channel(s).This is a promising result for Ge as a possible channel for future spin-FETs. |
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DOI: | 10.1109/ISTDM.2014.6874644 |