GaAsBi MQWs for multi-junction photovoltaics

A GaAsBi/GaAs multiple quantum well diode with a p-i-n structure including a 0.6μm i-region containing a 40 periods of 8nm well and 7.4nm barriers has been grown by molecular beam epitaxy. The photocurrent of the fabricated device was measured and compared to that of a strain-balanced 65 period InGa...

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Bibliographic Details
Main Authors: Richards, Robert, Bastiman, Faebian, Hunter, Christopher J., Mohmad, Abdul R., David, John P. R., Ekins-Daukes, Nicolas
Format: Conference Proceeding
Language:English
Subjects:
Bismuth
bismuth compounds
Gallium arsenide
III-V semiconductor materials
Indium gallium arsenide
materials science and technology
Photoconductivity
Photonic band gap
photovoltaic cells
quantum well devices
semiconductor epitaxial layers
semiconductor growth
Strain
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Summary:A GaAsBi/GaAs multiple quantum well diode with a p-i-n structure including a 0.6μm i-region containing a 40 periods of 8nm well and 7.4nm barriers has been grown by molecular beam epitaxy. The photocurrent of the fabricated device was measured and compared to that of a strain-balanced 65 period InGaAs/GaAsP MQW p-i-n diode grown by metal-organic vapour phase epitaxy. The GaAsBi device exhibits an ideality factor of 1.8 and a photoluminescence peak at 1055nm. The photocurrent of the GaAsBi device was comparable to that of the InGaAs/GaAsP device at around 920nm but continued to produce current out to ~1100nm.
ISSN:0160-8371
DOI:10.1109/PVSC.2013.6744153