Characterization of Cu(In,Ga)Se Electrodeposited and Co-Evaporated Devices by Means of Concentrated Illumination

We present a new Cu(In,Ga)Se 2 characterization tool: Cu(In,Ga)Se 2 microcells. By creating pixels on a Cu(In,Ga)Se 2 substrate, we are able to test electrically different locations. Moreover, because of the reduced size of the cells, (5-to 500-μm wide), heat and spreading resistance losses are made...

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Bibliographic Details
Published in:IEEE journal of photovoltaics 2014-03, Vol.4 (2), p.693-696
Main Authors: Paire, M., Jean, C., Lombez, L., Sidali, T., Duchatelet, A., Chassaing, E., Savidand, G., Donsanti, F., Jubault, M., Collin, S., Pelouard, J.-L, Lincot, D., Guillemoles, J.-F
Format: Article
Language:English
Subjects:
Conductivity
Current-voltage characteristics
Lighting
Microcell networks
Photovoltaic cells
Photovoltaic systems
Resistance
Temperature
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Summary:We present a new Cu(In,Ga)Se 2 characterization tool: Cu(In,Ga)Se 2 microcells. By creating pixels on a Cu(In,Ga)Se 2 substrate, we are able to test electrically different locations. Moreover, because of the reduced size of the cells, (5-to 500-μm wide), heat and spreading resistance losses are made negligible, which make high flux characterizations available. We analyze current-voltage curves under high concentration to gain insight in the physical properties of Cu(In,Ga)Se 2 cells. From our analysis, Cu(In,Ga)Se 2 electrodeposited absorbers present resistivity fluctuations that are much more important than co-evaporated ones. These absorbers, as they present more electronic defects, are also more affected by the V oc increase under intense fluxes, and the efficiency gains can be very significant: up to 6% absolute efficiency points at less than 50 suns.
ISSN:2156-3381
2156-3403
DOI:10.1109/JPHOTOV.2013.2293889