Molecular beam epitaxy of solid solutions GaPxAs1−x: Effect of growth condition on the composition of group V sublattice

Impact of substrate temperature, fuxes of As 2 , P 2 and Ga on the layers composition of solid solution GaP x As 1-x (001) during molecular-beam epitaxy (MBE) was experimentally investigated. The experimental data obtained for a wide range of growth conditions were analyzed. The analysis results are...

Full description

Saved in:
Bibliographic Details
Main Authors: Emelyanov, Eugene A., Putyato, Mikhail A., Semyagin, Boris R., Feklin, Dmitrii F., Preobrazhenskii, Valerii V.
Format: Conference Proceeding
Language:English
Subjects:
arsenic
Chemical elements
dimers
Molecular beam epitaxial growth
Molecular-beam epitaxy (MBE)
phosphorus
Physics
Semiconductor process modeling
Solid modeling
solid solution of GaP x As 1−x
Solids
sublattice composition
Surface reconstruction
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Impact of substrate temperature, fuxes of As 2 , P 2 and Ga on the layers composition of solid solution GaP x As 1-x (001) during molecular-beam epitaxy (MBE) was experimentally investigated. The experimental data obtained for a wide range of growth conditions were analyzed. The analysis results are represented in the form of the kinetic model describing the formation process for composition of GaP x As 1-x (001) solid solution during MBE. The model can be used for the choice of growth conditions of GaP x As 1-x (001) at a given phosphorus fraction.
ISSN:1815-3712
DOI:10.1109/EDM.2013.6641926