Protonic nonvolatile field effect transistor memories in Si/SiO/sub 2//Si structures

A low-voltage, radiation-tolerant, nonvolatile field effect transistor (NVFET) memory involving proton motion in SiO/sub 2/ is illustrated in both bulk Si and silicon-on-insulator devices. We discuss a mechanism by which the protons are created in the oxide layer by a forming gas anneal. At low temp...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1997-12, Vol.44 (6), p.1789-1798
Main Authors: Warren, W.L., Fleetwood, D.M., Schwank, J.R., Shaneyfelt, M.R., Draper, B.L., Winokur, P.S., Knoll, M.G., Vanheusden, K., Devine, R.A.B., Archer, L.B., Wallace, R.M.
Format: Article
Language:English
Subjects:
Annealing
Crystallization
Degradation
Dielectrics
FETs
Hydrogen
Ionizing radiation
Nonvolatile memory
Passivation
Protons
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Summary:A low-voltage, radiation-tolerant, nonvolatile field effect transistor (NVFET) memory involving proton motion in SiO/sub 2/ is illustrated in both bulk Si and silicon-on-insulator devices. We discuss a mechanism by which the protons are created in the oxide layer by a forming gas anneal. At low temperature (T
ISSN:0018-9499
1558-1578
DOI:10.1109/23.658944