Analysis of resistance variations and variance-aware read circuit for cross-point ReRAM

An adaptive reference control is proposed to adjust the reference current of current-mode sense amplifier (SA) for optimum read margin along with spatial distribution and temporal drift of the resistance of ReRAM cells. An ADC-based SA for distributed dummy cell is used to examine the distribution d...

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Bibliographic Details
Main Authors: Jae-Koo Park, Sang-Yun Kim, Jong-Min Baek, Dong-Jin Seo, Jung-Hoon Chun, Kee-Won Kwon
Format: Conference Proceeding
Language:English
Subjects:
ADC-based SA
Arrays
Current measurement
Distribution functions
Electrical resistance measurement
Graphical models
Hafnium compounds
Reference control
ReRAM
Resistance
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Description
Summary:An adaptive reference control is proposed to adjust the reference current of current-mode sense amplifier (SA) for optimum read margin along with spatial distribution and temporal drift of the resistance of ReRAM cells. An ADC-based SA for distributed dummy cell is used to examine the distribution data, and binary SA with regulated reference for memory cells provides fast and reliable read in cross-point cell array. The adaptive reference control prevents yield drop due to resistance degradation after 10 6 times read disturbance. Maximum read speed of disturbed ReRAM is also improved from 50ns to 28.4ns. The circuit is fabricated using 350nm CMOS technology and mounted with 1-Kb HfOx cross-point array to verify the control.
ISSN:2159-483X
DOI:10.1109/IMW.2013.6582111