Intrinsic transistor reliability improvements from 22nm tri-gate technology

This paper highlights the intrinsic reliability capabilities of Intel's 22nm process technology, which introduced the tri-gate transistor architecture and features a 3 rd generation high-κ/metal-gate process. Results are detailed from all traditional transistor reliability mechanisms, including...

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Bibliographic Details
Main Authors: Ramey, S., Ashutosh, A., Auth, C., Clifford, J., Hattendorf, M., Hicks, J., James, R., Rahman, A., Sharma, V., St. Amour, A., Wiegand, C.
Format: Conference Proceeding
Language:English
Subjects:
BTI
Degradation
FinFET
HCI
Integrated circuit reliability
Logic gates
MOS devices
Optimization
reliability
TDDB
Transistors
tri-gate
Online Access:Request full text
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Summary:This paper highlights the intrinsic reliability capabilities of Intel's 22nm process technology, which introduced the tri-gate transistor architecture and features a 3 rd generation high-κ/metal-gate process. Results are detailed from all traditional transistor reliability mechanisms, including BTI, TDDB, SILC, and HCI. In addition, characteristics unique to this transistor architecture and process technology are described.
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2013.6532017