Ultra-Wide Voltage Range designs in Fully-Depleted Silicon-On-Insulator FETs

Todays' MPSoC applications are requiring a convergence between very high speed and ultra low power. Ultra Wide Voltage Range (UWVR) capability appears as a solution for high energy efficiency with the objective to improve the speed at very low voltage and decrease the power at high speed. Using...

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Main Authors: Beigne, E., Valentian, A., Giraud, B., Thomas, O., Benoist, T., Thonnart, Y., Bernard, S., Moritz, G., Billoint, O., Maneglia, Y., Flatresse, P., Noel, J.P., Abouzeid, F., Pelloux-Prayer, B., Grover, A., Clerc, S., Roche, P., Le Coz, J., Engels, S., Wilson, R.
Format: Conference Proceeding
Language:English
Subjects:
adaptive architectures
Doping
Energy efficiency
FDSOI
Logic gates
Low voltage
Random access memory
Transistors
Ultra Thin Body and Box
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Summary:Todays' MPSoC applications are requiring a convergence between very high speed and ultra low power. Ultra Wide Voltage Range (UWVR) capability appears as a solution for high energy efficiency with the objective to improve the speed at very low voltage and decrease the power at high speed. Using Fully Depleted Silicon-On-Insulator (FDSOI) devices significantly improves the trade-off between leakage, variability and speed even at low-voltage. A full design framework is presented for UWVR operation using FDSOI Ultra Thin Body and Box technology considering power management, multi-VT enablement, standard cells design and SRAM bitcells. Technology performances are demonstrated on a ARM A9 critical path showing a speed increase from 40% to 200% without added energy cost. In opposite, when performance is not required, FDSOI enables to reduce leakage power up to 10X using Reverse Body Biasing.
ISSN:1530-1591
1558-1101
DOI:10.7873/DATE.2013.135