Proton and \gamma -Rays Irradiation-Induced Dark Current Random Telegraph Signal in a 0.18- \mu} CMOS Image Sensor

The dark current random telegraph signal (RTS) behavior has been studied in a five-transistor-per-pixel (5T) pinned photodiode 0.18-μm COTS active pixel sensor (APS). Several devices, irradiated using protons and gamma rays, have been studied in order to assess the ionizing and displacement damage e...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2013-08, Vol.60 (4), p.2503-2510
Main Authors: Martin, E., Nuns, T., Virmontois, C., David, J.-P, Gilard, O.
Format: Article
Language:English
Subjects:
CMOS active pixel sensor (APS)
Current measurement
Dark current
gamma irradiation
hot pixels
Logic gates
Performance evaluation
Photodiodes
pinned photodiode
proton irradiation
Protons
Radiation effects
random telegraph signals (RTS)
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Summary:The dark current random telegraph signal (RTS) behavior has been studied in a five-transistor-per-pixel (5T) pinned photodiode 0.18-μm COTS active pixel sensor (APS). Several devices, irradiated using protons and gamma rays, have been studied in order to assess the ionizing and displacement damage effects. The influence of the proton energy, fluence, ionizing dose and applied bias during irradiation on the number of RTS pixels, the number of discrete levels, maximum transition amplitude, and mean switching time constants is investigated.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2013.2251662