Impact of bulk/SOI 10nm FinFETs on 3T1D-DRAM cell performance

While the feasibility of SOI or bulk substrates for 10nm FinFETs has been shown, their impact on 3T1D memory performance has not been studied yet. In our study, bulk-based FinFETs show a better behavior for golden devices. Nevertheless, when variation is factored in, SOI-based FinFETs present better...

Full description

Saved in:
Bibliographic Details
Main Authors: Amat, E., Almudever, C. G., Aymerich, N., Canal, R., Rubio, A.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
FinFETs
Fluctuations
Logic gates
Performance evaluation
Random access memory
Substrates
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:While the feasibility of SOI or bulk substrates for 10nm FinFETs has been shown, their impact on 3T1D memory performance has not been studied yet. In our study, bulk-based FinFETs show a better behavior for golden devices. Nevertheless, when variation is factored in, SOI-based FinFETs present better tolerance and, consequently, lower performance spread than bulk-based devices. When considering environment temperature it is always a detrimental factor for both multi-gate devices, but the impact is lower for the bulk ones.
DOI:10.1109/ICSICT.2012.6466713