Fabrication of \hbox\hbox/\hbox Josephson Junctions Using In Situ Magnetron Sputtering and Atomic Layer Deposition

Atomic layer deposition (ALD) provides a promising approach for deposition of ultrathin low-defect-density tunnel barriers, and it has been implemented in a high-vacuum magnetron sputtering system for in situ deposition of ALD-Al 2 O 3 tunnel barriers in superconductor-insulator-superconductor Josep...

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Bibliographic Details
Published in:IEEE transactions on applied superconductivity 2013-06, Vol.23 (3), p.1100705-1100705
Main Authors: Rongtao Lu, Elliot, A. J., Wille, L., Bo Mao, Siyuan Han, Wu, J. Z., Talvacchio, J., Schulze, H. M., Lewis, R. M., Ewing, D. J., Yu, H. F., Xue, G. M., Zhao, S. P.
Format: Article
Language:English
Subjects:
Atomic layer deposition (ALD)
Fabrication
Josephson junction
Josephson junctions
Junctions
Niobium
Resistance
Sputtering
Temperature measurement
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Summary:Atomic layer deposition (ALD) provides a promising approach for deposition of ultrathin low-defect-density tunnel barriers, and it has been implemented in a high-vacuum magnetron sputtering system for in situ deposition of ALD-Al 2 O 3 tunnel barriers in superconductor-insulator-superconductor Josephson junctions. A smooth ALD-Al 2 O 3 barrier layer was grown on an Al-wetted Nb bottom electrode and was followed with a top Nb electrode growth using sputtering. Preliminary low temperature measurements of current-voltage characteristics of the Josephson junctions made from these trilayers confirmed the integrity of the ALD-Al 2 O 3 barrier layer. However, the I c R N product of the junctions is much smaller than the value expected from the Ambegaokar-Baratoff formula suggesting a significant pair-breaking mechanism at the interfaces.
ISSN:1051-8223
1558-2515
DOI:10.1109/TASC.2012.2236591