Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs-Methodology for Radiation Hardness Assurance

A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2012-12, Vol.59 (6), p.2920-2929
Main Authors: Ferlet-Cavrois, V., Binois, C., Carvalho, A., Ikeda, N., Inoue, M., Eisener, B., Gamerith, S., Chaumont, G., Pintacuda, F., Javanainen, A., Schwank, J. R., Shaneyfelt, M. R., Lauenstein, J-M, Ladbury, R. L., Muschitiello, M., Poivey, C., Mohammadzadeh, A.
Format: Article
Language:English
Subjects:
Assurance
Capacitors
Dielectric breakdown
Gates
Heavy ions
MOSFETs
Nuclear power generation
Oxides
Power MOSFET
power MOSFETs
Radiation effects
Radiation hardening
Radiation hardness
radiation hardness assurance
Rupture
single event gate rupture
Space technology
Statistical analysis
time dependant dielectric breakdown
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Description
Summary:A methodology for power MOSFET radiation hardness assurance is proposed. It is based on the statistical analysis of destructive events, such as gate oxide rupture. Examples of failure rate calculations are performed.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2012.2223761