"PICO-4" Single Event Effects Evaluation and Testing Facility Based on Wavelength Tunable Picosecond Laser

Technical characteristics of "PICO-4" SEE simulation facility utilizing a tunable picosecond laser source are presented. Its capabilities aimed on simulation of single event effects under space environment in Si, GaAs, SiGe etc. microelectronic devices are discussed.

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Bibliographic Details
Main Authors: Egorov, A. N., Chumakov, A. I., Mavritskiy, O. B., Pechenkin, A. A., Koltsov, D., Yanenko, A. V.
Format: Conference Proceeding
Language:English
Subjects:
Laser beams
Measurement by laser beam
Optical attenuators
Radiation effects
Semiconductor device measurement
Semiconductor lasers
Online Access:Request full text
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Description
Summary:Technical characteristics of "PICO-4" SEE simulation facility utilizing a tunable picosecond laser source are presented. Its capabilities aimed on simulation of single event effects under space environment in Si, GaAs, SiGe etc. microelectronic devices are discussed.
ISSN:2154-0519
2154-0535
DOI:10.1109/REDW.2012.6353726