Variation-resilient voltage generation for SRAM weak cell testing

Increasing process spread has made SRAM stability a major concern in SoC integration. Previous approaches to SRAM stability testing focused on the CUT but did not address the impact of variation on testing circuitry itself. This paper presents a very simple voltage generator scheme that considers co...

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Bibliographic Details
Main Authors: Chingwei Yeh, Yan-Nan Liu, Jinn-Shyan Wang, Pei-Yao Chang
Format: Conference Proceeding
Language:English
Subjects:
Controllability
Lead
Random access memory
Switches
Testing
Online Access:Request full text
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Summary:Increasing process spread has made SRAM stability a major concern in SoC integration. Previous approaches to SRAM stability testing focused on the CUT but did not address the impact of variation on testing circuitry itself. This paper presents a very simple voltage generator scheme that considers controllability and observability of testing circuitry while dealing with process variations. The proposed design can be easily tuned with a bias voltage to combat variations. Experimental results with 0.18um technology show that voltage deviation within the range of ±2% can be achieved, which greatly increases the robustness of testing circuitry against variations.
ISSN:2162-7541
2162-755X
DOI:10.1109/ASICON.2011.6157168