3D copper TSV integration, testing and reliability

Node-agnostic Cu TSVs integrated with high-K/metal gate and embedded DRAM were used in functional 3D modules. Thermal cycling and stress results show no degradation of TSV or BEOL structures, and device and functional data indicate that there is no significant impact from TSV processing and/or proxi...

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Main Authors: Farooq, M. G., Graves-Abe, T. L., Landers, W. F., Kothandaraman, C., Himmel, B. A., Andry, P. S., Tsang, C. K., Sprogis, E., Volant, R. P., Petrarca, K. S., Winstel, K. R., Safran, J. M., Sullivan, T. D., Chen, F., Shapiro, M. J., Hannon, R., Liptak, R., Berger, D., Iyer, S. S.
Format: Conference Proceeding
Language:English
Subjects:
Copper
Face
Random access memory
Three dimensional displays
Through-silicon vias
Wiring
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Summary:Node-agnostic Cu TSVs integrated with high-K/metal gate and embedded DRAM were used in functional 3D modules. Thermal cycling and stress results show no degradation of TSV or BEOL structures, and device and functional data indicate that there is no significant impact from TSV processing and/or proximity.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2011.6131504