High efficiency In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As power HEMT for low supply voltage wireless communications

In the RF transmit/receive block of a wireless personal communication system, the power amplifiers consume the largest battery power. To reduce the size and power consumption of the systems, the demand for low supply voltage power transistors with high efficiency is growing for portable wireless com...

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Bibliographic Details
Main Authors: Wang, Y.C., Kuo, J.M., Lothian, J.R., Ren, F., Tsai, H.S., Weiner, J.S., Lin, J., Tate, A., Mayo, W.E., Chen, Y.K.
Format: Conference Proceeding
Language:English
Subjects:
Batteries
HEMTs
Low voltage
MODFETs
Power amplifiers
Power supplies
Power transistors
Radio frequency
Radiofrequency amplifiers
Wireless communication
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Summary:In the RF transmit/receive block of a wireless personal communication system, the power amplifiers consume the largest battery power. To reduce the size and power consumption of the systems, the demand for low supply voltage power transistors with high efficiency is growing for portable wireless communication applications. High electron mobility transistors (HEMTs) are an excellent candidate for such applications due to their high maximum drain current, low knee voltage and high cutoff frequencies. In this talk we demonstrate a high efficiency and low supply voltage power transistor for portable wireless communication applications using a new In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P-In/sub 0.2/Ga/sub 0.8/As double-heterojunction pseudomorphic HEMT (DHPHEMT).
DOI:10.1109/DRC.1997.612478