High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator

This letter presents transistor device results on ultrathin AIN/GaN high-electron mobility transistors grown on a sapphire substrate with high dc/RF performance, including low gate leakage and high transconductance. Devices with 80and 180-nm T-gates are compared, which demonstrate drain-induced OFF-...

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Bibliographic Details
Published in:IEEE electron device letters 2011-12, Vol.32 (12), p.1677-1679
Main Authors: Chabak, K. D., Walker, Dennis E., Johnson, M. R., Crespo, A., Dabiran, A. M., Smith, D. J., Wowchak, A. M., Tetlak, S. K., Kossler, M., Gillespie, J. K., Fitch, R. C., Trejo, M.
Format: Article
Language:English
Subjects:
Aluminum nitride
Applied sciences
Electronics
Exact sciences and technology
Gallium nitride
HEMTs
high-electron-mobility transistor (HEMT)
lattice strain
Leakage current
Logic gates
low gate leakage
MODFETs
sapphire substrate
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Substrates
Transconductance
Transistors
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Summary:This letter presents transistor device results on ultrathin AIN/GaN high-electron mobility transistors grown on a sapphire substrate with high dc/RF performance, including low gate leakage and high transconductance. Devices with 80and 180-nm T-gates are compared, which demonstrate drain-induced OFF-state gate leakage currents below 10 -6 A/mm and extrinsic transconductance g m ~ 500 mS/mm by utilizing a ~2-3 nm amorphous oxide layer formed under the T-gate during processing. In addition, excellent dc results such as R C ; 100 GHz operation, which is among the best so far reported for AIN/GaN technology.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2167952