Cell-Temperature Determination in InGaP-(In)GaAs-Ge Triple-Junction Solar Cells

Temperature-sensitive voltages are derived from current-voltage characteristics of an InGaP-(In)GaAs-Ge triple-junction solar cell biased at various current densities in the dark and under irradiation. Dynamic measurements of cell temperatures were performed with a solar simulator by alternately per...

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Bibliographic Details
Published in:IEEE electron device letters 2011-10, Vol.32 (10), p.1412-1414
Main Authors: YANG, Wei-Chen, LO, Chieh, WEI, Chin-Ying, LOUR, Wen-Shiung
Format: Article
Language:English
Subjects:
Applied sciences
Cell temperature
Current density
Dark current
Devices
Dynamics
Electric potential
Electronics
Energy
Exact sciences and technology
Natural energy
Ocean temperature
Optoelectronic devices
Photovoltaic cells
Photovoltaic conversion
Radiation effects
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
solar cell
Solar cells
Solar cells. Photoelectrochemical cells
Solar energy
Solar simulators
Temperature
Temperature measurement
triple junction
Voltage
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Summary:Temperature-sensitive voltages are derived from current-voltage characteristics of an InGaP-(In)GaAs-Ge triple-junction solar cell biased at various current densities in the dark and under irradiation. Dynamic measurements of cell temperatures were performed with a solar simulator by alternately permitting and blocking the sunlight. An initial temperature increasing rate of 1°C/s was determined for the solar cell exposed to 1-sun light intensity of 100 mW ·cm -2 . Furthermore, the times required for increases of 5°C, 10°C, and 15°C in the cell temperature were 7, 21, and 48 s, respectively. Experimentally estimated cell temperature was finally stabilized at 48°C ± 0.5°C.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2163294