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Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT Models
An improved direct parameter extraction method is proposed for III-V heterojunction bipolar transistor (HBT) external base resistance R bx extraction from forward active S -parameters. The method is formulated taking into account the current dependence of the intrinsic base-collector capacitance fou...
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| Published in: | IEEE transactions on electron devices 2011-09, Vol.58 (9), p.3004-3011 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c418t-b69a9d166ae722bb381b12994beda63b13ecc557a5b13529e0b6d3c595b06a163 |
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| cites | cdi_FETCH-LOGICAL-c418t-b69a9d166ae722bb381b12994beda63b13ecc557a5b13529e0b6d3c595b06a163 |
| container_end_page | 3011 |
| container_issue | 9 |
| container_start_page | 3004 |
| container_title | IEEE transactions on electron devices |
| container_volume | 58 |
| creator | Johansen, T. K. Krozer, V. Nodjiadjim, V. Konczykowska, A. Dupuy, J. Riet, M. |
| description | An improved direct parameter extraction method is proposed for III-V heterojunction bipolar transistor (HBT) external base resistance R bx extraction from forward active S -parameters. The method is formulated taking into account the current dependence of the intrinsic base-collector capacitance found in III-V HBTs with a fully depleted collector. It is shown that the real part of Z 11 - Z 12 reduces to the external base resistance at the collector current Ic = Ip /(1 - X 0 ), where Ip is a characteristic current and X 0 is the zero-current distribution factor given as the ratio of the emitter to the collector area. The determination of the parameters Ip and X 0 from experimental S -parameters is described. The method is applied to high-speed submicrometer InP/InGaAs DHBT devices and leads to small-signal equivalent circuit models, which accurately predicts the measured S -parameters as well as the maximum stable power gain/maximum available power gain in the frequency range from 40 MHz to 110 GHz. |
| doi_str_mv | 10.1109/TED.2011.2160067 |
| format | article |
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K. ; Krozer, V. ; Nodjiadjim, V. ; Konczykowska, A. ; Dupuy, J. ; Riet, M.</creator><creatorcontrib>Johansen, T. K. ; Krozer, V. ; Nodjiadjim, V. ; Konczykowska, A. ; Dupuy, J. ; Riet, M.</creatorcontrib><description>An improved direct parameter extraction method is proposed for III-V heterojunction bipolar transistor (HBT) external base resistance R bx extraction from forward active S -parameters. The method is formulated taking into account the current dependence of the intrinsic base-collector capacitance found in III-V HBTs with a fully depleted collector. It is shown that the real part of Z 11 - Z 12 reduces to the external base resistance at the collector current Ic = Ip /(1 - X 0 ), where Ip is a characteristic current and X 0 is the zero-current distribution factor given as the ratio of the emitter to the collector area. The determination of the parameters Ip and X 0 from experimental S -parameters is described. The method is applied to high-speed submicrometer InP/InGaAs DHBT devices and leads to small-signal equivalent circuit models, which accurately predicts the measured S -parameters as well as the maximum stable power gain/maximum available power gain in the frequency range from 40 MHz to 110 GHz.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2011.2160067</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Accumulators ; Applied sciences ; Capacitance ; Collectors ; Compound structure devices ; Devices ; DH-HEMTs ; Direct parameter extraction ; Electronics ; Exact sciences and technology ; Extraction ; heterojunction bipolar transistor (HBT) ; Heterojunction bipolar transistors ; Indium gallium arsenide ; Indium gallium arsenides ; Indium phosphide ; Indium phosphides ; InP ; Integrated circuit modeling ; Mathematical models ; Power gain ; Resistance ; Semiconductor electronics. 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(IEEE) Sep 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c418t-b69a9d166ae722bb381b12994beda63b13ecc557a5b13529e0b6d3c595b06a163</citedby><cites>FETCH-LOGICAL-c418t-b69a9d166ae722bb381b12994beda63b13ecc557a5b13529e0b6d3c595b06a163</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5975211$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,786,790,27957,27958,55147</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24513161$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Johansen, T. K.</creatorcontrib><creatorcontrib>Krozer, V.</creatorcontrib><creatorcontrib>Nodjiadjim, V.</creatorcontrib><creatorcontrib>Konczykowska, A.</creatorcontrib><creatorcontrib>Dupuy, J.</creatorcontrib><creatorcontrib>Riet, M.</creatorcontrib><title>Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT Models</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>An improved direct parameter extraction method is proposed for III-V heterojunction bipolar transistor (HBT) external base resistance R bx extraction from forward active S -parameters. The method is formulated taking into account the current dependence of the intrinsic base-collector capacitance found in III-V HBTs with a fully depleted collector. It is shown that the real part of Z 11 - Z 12 reduces to the external base resistance at the collector current Ic = Ip /(1 - X 0 ), where Ip is a characteristic current and X 0 is the zero-current distribution factor given as the ratio of the emitter to the collector area. The determination of the parameters Ip and X 0 from experimental S -parameters is described. The method is applied to high-speed submicrometer InP/InGaAs DHBT devices and leads to small-signal equivalent circuit models, which accurately predicts the measured S -parameters as well as the maximum stable power gain/maximum available power gain in the frequency range from 40 MHz to 110 GHz.</description><subject>Accumulators</subject><subject>Applied sciences</subject><subject>Capacitance</subject><subject>Collectors</subject><subject>Compound structure devices</subject><subject>Devices</subject><subject>DH-HEMTs</subject><subject>Direct parameter extraction</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Extraction</subject><subject>heterojunction bipolar transistor (HBT)</subject><subject>Heterojunction bipolar transistors</subject><subject>Indium gallium arsenide</subject><subject>Indium gallium arsenides</subject><subject>Indium phosphide</subject><subject>Indium phosphides</subject><subject>InP</subject><subject>Integrated circuit modeling</subject><subject>Mathematical models</subject><subject>Power gain</subject><subject>Resistance</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>small-signal model</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNpdkE1LAzEQhoMoWKt3wcsiiKdtM8kmuzlqW2tBUbSeQ5Kdwsp-aLIV_fdmafHgKRPmmRfeh5BzoBMAqqbrxXzCKMCEgaRU5gdkBELkqZKZPCQjSqFIFS_4MTkJ4T1-ZZaxEXlbNR---8IyWXz36FtTJ7cmYPKCoQq9aR0OC29cX3Vtsul88rq1TeV812Dkk1X7PF21S3MTkvn97Tp57Eqswyk52pg64Nn-HZO3u8V6dp8-PC1Xs5uH1GVQ9KmVyqgSpDSYM2YtL8ACUyqzWBrJLXB0LpYwIo6CKaRWltwJJSyVBiQfk-tdbuzwucXQ66YKDuvatNhtg1YQwzIqRSQv_5Hv3XaoG3RRZDJngg9xdAfFeiF43OgPXzXG_2igerCso2U9WNZ7y_Hkap9rgjP1xkdlVfi7Y5kADhIid7HjKkT8WwuVCwbAfwEogoOq</recordid><startdate>20110901</startdate><enddate>20110901</enddate><creator>Johansen, T. K.</creator><creator>Krozer, V.</creator><creator>Nodjiadjim, V.</creator><creator>Konczykowska, A.</creator><creator>Dupuy, J.</creator><creator>Riet, M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope></search><sort><creationdate>20110901</creationdate><title>Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT Models</title><author>Johansen, T. K. ; Krozer, V. ; Nodjiadjim, V. ; Konczykowska, A. ; Dupuy, J. ; Riet, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c418t-b69a9d166ae722bb381b12994beda63b13ecc557a5b13529e0b6d3c595b06a163</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Accumulators</topic><topic>Applied sciences</topic><topic>Capacitance</topic><topic>Collectors</topic><topic>Compound structure devices</topic><topic>Devices</topic><topic>DH-HEMTs</topic><topic>Direct parameter extraction</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Extraction</topic><topic>heterojunction bipolar transistor (HBT)</topic><topic>Heterojunction bipolar transistors</topic><topic>Indium gallium arsenide</topic><topic>Indium gallium arsenides</topic><topic>Indium phosphide</topic><topic>Indium phosphides</topic><topic>InP</topic><topic>Integrated circuit modeling</topic><topic>Mathematical models</topic><topic>Power gain</topic><topic>Resistance</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>small-signal model</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Johansen, T. K.</creatorcontrib><creatorcontrib>Krozer, V.</creatorcontrib><creatorcontrib>Nodjiadjim, V.</creatorcontrib><creatorcontrib>Konczykowska, A.</creatorcontrib><creatorcontrib>Dupuy, J.</creatorcontrib><creatorcontrib>Riet, M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Johansen, T. K.</au><au>Krozer, V.</au><au>Nodjiadjim, V.</au><au>Konczykowska, A.</au><au>Dupuy, J.</au><au>Riet, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT Models</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2011-09-01</date><risdate>2011</risdate><volume>58</volume><issue>9</issue><spage>3004</spage><epage>3011</epage><pages>3004-3011</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><notes>ObjectType-Article-2</notes><notes>SourceType-Scholarly Journals-1</notes><notes>ObjectType-Feature-1</notes><notes>content type line 23</notes><abstract>An improved direct parameter extraction method is proposed for III-V heterojunction bipolar transistor (HBT) external base resistance R bx extraction from forward active S -parameters. The method is formulated taking into account the current dependence of the intrinsic base-collector capacitance found in III-V HBTs with a fully depleted collector. It is shown that the real part of Z 11 - Z 12 reduces to the external base resistance at the collector current Ic = Ip /(1 - X 0 ), where Ip is a characteristic current and X 0 is the zero-current distribution factor given as the ratio of the emitter to the collector area. The determination of the parameters Ip and X 0 from experimental S -parameters is described. The method is applied to high-speed submicrometer InP/InGaAs DHBT devices and leads to small-signal equivalent circuit models, which accurately predicts the measured S -parameters as well as the maximum stable power gain/maximum available power gain in the frequency range from 40 MHz to 110 GHz.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2011.2160067</doi><tpages>8</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.3004-3011 |
| issn | 0018-9383 1557-9646 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Journals |
| subjects | Accumulators Applied sciences Capacitance Collectors Compound structure devices Devices DH-HEMTs Direct parameter extraction Electronics Exact sciences and technology Extraction heterojunction bipolar transistor (HBT) Heterojunction bipolar transistors Indium gallium arsenide Indium gallium arsenides Indium phosphide Indium phosphides InP Integrated circuit modeling Mathematical models Power gain Resistance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices small-signal model Transistors |
| title | Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT Models |
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