Improved External Base Resistance Extraction for Submicrometer InP/InGaAs DHBT Models

An improved direct parameter extraction method is proposed for III-V heterojunction bipolar transistor (HBT) external base resistance R bx extraction from forward active S -parameters. The method is formulated taking into account the current dependence of the intrinsic base-collector capacitance fou...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2011-09, Vol.58 (9), p.3004-3011
Main Authors: Johansen, T. K., Krozer, V., Nodjiadjim, V., Konczykowska, A., Dupuy, J., Riet, M.
Format: Article
Language:English
Subjects:
Accumulators
Applied sciences
Capacitance
Collectors
Compound structure devices
Devices
DH-HEMTs
Direct parameter extraction
Electronics
Exact sciences and technology
Extraction
heterojunction bipolar transistor (HBT)
Heterojunction bipolar transistors
Indium gallium arsenide
Indium gallium arsenides
Indium phosphide
Indium phosphides
InP
Integrated circuit modeling
Mathematical models
Power gain
Resistance
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
small-signal model
Transistors
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Summary:An improved direct parameter extraction method is proposed for III-V heterojunction bipolar transistor (HBT) external base resistance R bx extraction from forward active S -parameters. The method is formulated taking into account the current dependence of the intrinsic base-collector capacitance found in III-V HBTs with a fully depleted collector. It is shown that the real part of Z 11 - Z 12 reduces to the external base resistance at the collector current Ic = Ip /(1 - X 0 ), where Ip is a characteristic current and X 0 is the zero-current distribution factor given as the ratio of the emitter to the collector area. The determination of the parameters Ip and X 0 from experimental S -parameters is described. The method is applied to high-speed submicrometer InP/InGaAs DHBT devices and leads to small-signal equivalent circuit models, which accurately predicts the measured S -parameters as well as the maximum stable power gain/maximum available power gain in the frequency range from 40 MHz to 110 GHz.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2011.2160067