Helically propagating modes in InGaAs nanoneedle lasers grown on poly-silicon and silicon substrates

InGaAs nanoneedle lasers were grown on both poly crystalline-Si and (100)-Si substrates by low temperature (400°C) MOCVD. Measured near field mode patterns agree well with FDTD simulations, confirming helically propagating modes as lasing modes.

Saved in:
Bibliographic Details
Main Authors: Thai Tran, Chen, Roger, Kar Wei Ng, Wai Son Ko, Fanglu Lu, Chang-Hasnain, Connie J.
Format: Conference Proceeding
Language:English
Subjects:
Indium gallium arsenide
Laser modes
Needles
Optical pumping
Pump lasers
Silicon
Substrates
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:InGaAs nanoneedle lasers were grown on both poly crystalline-Si and (100)-Si substrates by low temperature (400°C) MOCVD. Measured near field mode patterns agree well with FDTD simulations, confirming helically propagating modes as lasing modes.
ISSN:2160-8989
2160-9004
DOI:10.1364/CLEO_SI.2011.CTuR3