Robust porous SiOCH (k=2.5) for 28nm and beyond technology node

Robust p-SiOCH was deposited in a PECVD reactor using Si precursor with Si-C-C-Si bond structure. It achieved its elastic modulus of 8.4GPa at k=2.55, comparable to the reference silica-based p-SiOCH that has been widely evaluated among the major chipmakers. However, its post-integration k increase...

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Bibliographic Details
Main Authors: Janghee Lee, Sang Hoon Ahn, Insun Jung, Kyu-Hee Han, Gyeonghee Kim, Sang-Don Nam, Woo Sung Jeon, Byeong Hee Kim, Gil Heyun Choi, Siyoung Choi, Ho-Kyu Kang, Chilhee Chung
Format: Conference Proceeding
Language:English
Subjects:
Atomic measurements
bridged carbon
Carbon
carboxysilane
NMR
Nuclear magnetic resonance
p-SiOCH
PECVD
plasma damage
Plasmas
Resistance
Robustness
Silicon
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Summary:Robust p-SiOCH was deposited in a PECVD reactor using Si precursor with Si-C-C-Si bond structure. It achieved its elastic modulus of 8.4GPa at k=2.55, comparable to the reference silica-based p-SiOCH that has been widely evaluated among the major chipmakers. However, its post-integration k increase was ~0.1 on a 100nm-pitched single damascene line and negligible on a 90nm-pitched trench first metal hardmask dual damascene line. Its superb performance in plasma damage resistance without the sacrifice in its mechanical strength can be attributed to the presence of bridged carbon(s) between Si atoms in addition to the methyl functional group. According to 29 Si and 13 C nuclear magnetic resonance (NMR) spectra, bridged carbon and carbon in the methyl group exist approximately in 1:1 ratio in the robust p-SiOCH.
ISSN:2380-632X
2380-6338
DOI:10.1109/IITC.2011.5940317