Cu electromigration improvement by adhesion promotion treatment (APT)

A new process to promote adhesion between the SiC diffusion barrier and Cu was developed to achieve significant improvement in electromigration of the Cu interconnect without sacrificing RC delay, line-to-line leakage, breakdown voltage and time-dependent-dielectric-breakdown. An in-situ treatment o...

Full description

Saved in:
Bibliographic Details
Main Authors: Jengyi Yu, Hui-Jung Wu, Shaviv, R., Mountsier, T., van Schravendijk, B., Dixit, G., Gengwei Jiang, Subramonium, P., Sriram, M., Antonelli, A.
Format: Conference Proceeding
Language:English
Subjects:
Adhesives
Copper
Reliability
Resistance
Surface treatment
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A new process to promote adhesion between the SiC diffusion barrier and Cu was developed to achieve significant improvement in electromigration of the Cu interconnect without sacrificing RC delay, line-to-line leakage, breakdown voltage and time-dependent-dielectric-breakdown. An in-situ treatment of the wafer surface inserted between the sequential processes of Cu pretreatment and SiC deposition increased the Cu/SiC interfacial adhesion by more than 30%. Electrical and physical characterization data is presented that demonstrates the improvement in reliability metrics of the interconnect using the newly developed process, while limiting the RC change to
ISSN:2380-632X
2380-6338
DOI:10.1109/IITC.2011.5940306