Characterization and Physical Modeling of Endurance in Embedded Non-Volatile Memory Technology

Transient and endurance mechanisms in high performance embedded non-volatile memory flash devices are investigated in detail. An extraction methodology combining measurements on equivalent transistors and flash cells is pro posed to discriminate the effects of defects on program/erase (P/E) efficien...

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Bibliographic Details
Main Authors: Garetto, D, Zaka, A, Manceau, J-P, Rideau, D, Dornel, E, Clark, W F, Schmid, A, Jaouen, H, Leblebici, Y
Format: Conference Proceeding
Language:English
Subjects:
Analytical models
Ash
Degradation
Logic gates
Numerical models
Stress
Transient analysis
Online Access:Request full text
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Summary:Transient and endurance mechanisms in high performance embedded non-volatile memory flash devices are investigated in detail. An extraction methodology combining measurements on equivalent transistors and flash cells is pro posed to discriminate the effects of defects on program/erase (P/E) efficiencies and on DC characteristics. A semi-analytical multiphonon-assisted charge trapping model is used to investigate the role and the impact of trapped charges on channel hot electron injection and Fowler-Nordheim efficiencies, threshold voltage variations and endurance characteristics.
ISSN:2159-483X
DOI:10.1109/IMW.2011.5873186