TDDB and Pulse-Breakdown Studies of Si-Rich \hbox Antifuses and Antifuse-Based ROMs

Antifuses are electronic devices that can be irreversibly converted from a high-resistance state to a low-resistance state. Thus, they are ideal candidates for one-time-programmable many-times-readable nonvolatile memories. In this paper, the reliability and the programming characteristics of Si-ric...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2011-01, Vol.58 (1), p.224-228
Main Authors: Kaplar, R J, Habermehl, S D, Apodaca, R T, Havener, B, Roherty-Osmun, E
Format: Article
Language:English
Subjects:
Antifuse
Dielectric breakdown
Laboratories
pulse testing
Read only memory
Reliability
Silicon
silicon nitride
Tunneling
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Summary:Antifuses are electronic devices that can be irreversibly converted from a high-resistance state to a low-resistance state. Thus, they are ideal candidates for one-time-programmable many-times-readable nonvolatile memories. In this paper, the reliability and the programming characteristics of Si-rich SiN x , antifuses have been studied using time-dependent dielectric breakdown and pulse-breakdown measurements on both single-device test structures and full read-only memories. Contrary to measurements on thick films in which the Poole-Frenkel barrier lowering dominates breakdown, these measurements on fully processed and integrated antifuses indicate that a Fowler-Nordheim-like mechanism governs both programming and long-term reliability.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2010.2089057