GaSb-based (thermo)photovoltaic cells with Zn diffused emitters

GaSb-based (thermo)photovoltaic cells were formed by Zn-diffusion into n-doped wafers. Two-dimensional simulations of GaSb cells varying the emitter structure and illumination conditions (AM1.5D, AM1.5D under GaAs, spectra of IR light sources) were performed. A comparison of different Zn diffusion m...

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Bibliographic Details
Main Authors: Bett, A.W., Keser, S., Stollwerck, G., Sulima, O.V., Wettling, W.
Format: Conference Proceeding
Language:English
Subjects:
Chemical technology
Computer simulation
Etching
Large-scale systems
Light sources
Lighting
Photovoltaic cells
Production
Radiative recombination
Zinc
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Summary:GaSb-based (thermo)photovoltaic cells were formed by Zn-diffusion into n-doped wafers. Two-dimensional simulations of GaSb cells varying the emitter structure and illumination conditions (AM1.5D, AM1.5D under GaAs, spectra of IR light sources) were performed. A comparison of different Zn diffusion methods showed that the diffusion from the vapor phase in a pseudo-closed-box system is the most simple, reproducible and results in the highest efficiency of the cells. An efficiency of 7.3% (AM1.5G) was achieved in a 1 cm/sup 2/ photovoltaic cell, designed for tandem or thermophotovoltaic (TPV) application. Under concentrated sunlight (200-250/spl times/) a 0.13 cm/sup 2/ GaSb cell reached an efficiency of 9.9%.
ISSN:0160-8371
DOI:10.1109/PVSC.1996.563965