Semiconductor discrete phase shifters for semiactive S-band array transceivers of up to 2 kW peak power

Three kinds of pin-diode discrete phase shifter for semi-active s-band array transceivers of up to 2 kW peak power design are presented. The results of modeling of electric and thermodynamic loadings in used silicon pin-diodes and in structural components in comparison with measured data are shown.

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Bibliographic Details
Main Authors: Savin, A M, Dobrov, V A, Bocharov, A V, Veschughin, N A, Ovchinnikov, S V
Format: Conference Proceeding
Language:English
Subjects:
Arrays
Data models
Electronic mail
Heating
Phase shifters
Silicon
Transceivers
Online Access:Request full text
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Description
Summary:Three kinds of pin-diode discrete phase shifter for semi-active s-band array transceivers of up to 2 kW peak power design are presented. The results of modeling of electric and thermodynamic loadings in used silicon pin-diodes and in structural components in comparison with measured data are shown.
DOI:10.1109/CRMICO.2010.5632610