Improved ESD protection in advanced FDSOI by using hybrid SOI/bulk Co-integration

We investigate the influence of different technological parameters on ESD robustness in advanced FDSOI devices. From Transmission Line Pulse (TLP) measurements, a comparison with other technologies enables us to evaluate the impact of ultrathin film and buried oxide. A solution based on hybrid SOI/b...

Full description

Saved in:
Bibliographic Details
Main Authors: Benoist, T, Fenouillet-Beranger, C, Guitard, N, Huguenin, J.-L, Monfray, S, Galy, P, Buj, C, Andrieu, F, Perreau, P, Marin-Cudraz, D, Faynot, O, Cristoloveanu, S, Gentil, P
Format: Conference Proceeding
Language:English
Subjects:
Conductivity
Electric fields
Electrostatic discharge
Leakage current
Logic gates
Robustness
Silicon
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We investigate the influence of different technological parameters on ESD robustness in advanced FDSOI devices. From Transmission Line Pulse (TLP) measurements, a comparison with other technologies enables us to evaluate the impact of ultrathin film and buried oxide. A solution based on hybrid SOI/bulk co-integration by using Silicon-On-Nothing technology is presented in order to improve ultra-thin film ESD performance.