Growth of sprayed CIS film and post-sulfurization effects

We studied CuInS 2 (CIS) film growth using high electrostatic field assisted ultrasonic spray deposition. All the sprayed CIS films were observed to be grown with mixed ordering mode, where chalcopyrite (CH) and CuAu (CA) orderings coexisted. For the high efficiency solar cell, CH-ordered CIS film i...

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Bibliographic Details
Main Authors: Dong-Yeup Lee, Hyesun Yoo, Ki-Bong Song, Jae Ho Yun, Kyunghoon Yoon, JunHo Kim
Format: Conference Proceeding
Language:English
Subjects:
Phase measurement
Scanning electron microscopy
Size measurement
Temperature measurement
Ultrasonic variables measurement
Zinc oxide
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Summary:We studied CuInS 2 (CIS) film growth using high electrostatic field assisted ultrasonic spray deposition. All the sprayed CIS films were observed to be grown with mixed ordering mode, where chalcopyrite (CH) and CuAu (CA) orderings coexisted. For the high efficiency solar cell, CH-ordered CIS film is desirable. We performed post-sulfurization for all as-sprayed films to induce recrystallization. After post-sulfurization of as-sprayed films, CH-ordered phase was significantly increased. For Cu-rich CIS films, the CH-fraction was increased to be ~0.8. The scanning electron microscopy measurement revealed that grain size was also increased after post-sulfurization. These results indicate that spray deposition could be utilized for the fabrication of high quality CIS photo absorbing films.
ISSN:0160-8371
DOI:10.1109/PVSC.2010.5614636