Application of a statistical compact model for Random Telegraph Noise to scaled-SRAM Vmin analysis

A statistical compact RTN (Random Telegraph Noise) model with a fixed V th shift and V gs dependent trap time constants is proposed. It accurately reproduces the experimental observation of larger V th fluctuation at higher |V gs |. The model is also applied to analysis of SRAM V min fluctuation and...

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Bibliographic Details
Main Authors: Tanizawa, M, Ohbayashi, S, Okagaki, T, Sonoda, K, Eikyu, K, Hirano, Y, Ishikawa, K, Tsuchiya, O, Inoue, Y
Format: Conference Proceeding
Language:English
Subjects:
Analytical models
Fluctuations
Mathematical model
MOS devices
Random access memory
Sensitivity
Transistors
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Summary:A statistical compact RTN (Random Telegraph Noise) model with a fixed V th shift and V gs dependent trap time constants is proposed. It accurately reproduces the experimental observation of larger V th fluctuation at higher |V gs |. The model is also applied to analysis of SRAM V min fluctuation and finds out the distribution follows a log-normal statistics.
ISSN:0743-1562
DOI:10.1109/VLSIT.2010.5556184