Investigation of charge-trap memories with AlN based band engineered storage layers

This paper presents an in-depth investigation of the electrical properties of charge trap memories with AlN based storage layers. The memory performance and reliability are studied in details and compared with the ones of a reference device using standard Si 3 N 4 as storage layer. An engineered cha...

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Bibliographic Details
Main Authors: Molas, G, Colonna, J P, Kies, R, Belhachemi, D, Bocquet, M, Gély, M, Vidal, V, Brianceau, P, Vandroux, L, Ghibaudo, G, De Salvo, B
Format: Conference Proceeding
Language:English
Subjects:
AlN
Aluminum oxide
Atherosclerosis
Charge trap memories
Dielectric materials
Dielectric measurements
Electron traps
engineered charge trapping layer
MANOS
Material storage
Photonic band gap
reliability
Reliability engineering
TANOS
Tin
Voltage
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Summary:This paper presents an in-depth investigation of the electrical properties of charge trap memories with AlN based storage layers. The memory performance and reliability are studied in details and compared with the ones of a reference device using standard Si 3 N 4 as storage layer. An engineered charge trapping layer is also proposed, made by an AlN/Si 3 N 4 double layer, which shows reduced program/erase voltages, combined with 10 6 excellent endurance and good retention (ΔV T >5V after 10 years at 125°C).
ISSN:2159-483X
DOI:10.1109/IMW.2010.5488309