160-GHz Passively Mode-Locked AlGaInAs 1.55- \mum Strained Quantum-Well Compound Cavity Laser

The first demonstration of harmonic mode-locked operation from a monolithic semiconductor laser comprising a compound cavity formed by twin deeply etched intracavity reflectors based on 1.55-μm AlGaInAs strained quantum-well material is presented. Nearly transform-limited Gaussian pulses are generat...

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Bibliographic Details
Published in:IEEE photonics technology letters 2010-05, Vol.22 (10), p.727-729
Main Authors: Lianping Hou, Stolarz, Piotr, Dylewicz, Rafal, Haji, Moss, Javaloyes, Julien, Qiu, Bocang, Bryce, A Catrina
Format: Article
Language:English
Subjects:
AlGaInAs
compound cavity
Etching
Frequency
harmonic mode-locked laser (MLL)
inductively coupled plasma (ICP) deep etching
Java
Laser mode locking
Optical materials
Optical pulse generation
Optical pulses
Optical waveguides
pulse generation
Quantum well lasers
Semiconductor lasers
strained quantum well
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Summary:The first demonstration of harmonic mode-locked operation from a monolithic semiconductor laser comprising a compound cavity formed by twin deeply etched intracavity reflectors based on 1.55-μm AlGaInAs strained quantum-well material is presented. Nearly transform-limited Gaussian pulses are generated at 160-GHz repetition rate with a 1.67-ps pulse duration.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2010.2045228