Effect of annealing on the properties of p-type nano Zn0.92Mn0.08O∶N Films

P-type conductive Zn 0.92 Mn 0.08 O:N thin films have been fabricated on quartz glass substrates by RF magnetron sputtering together with the direct implantation of N ions and post-annealing at appropriate condition. The XRD results indicate that all the films have c-axis preferred orientation, no m...

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Bibliographic Details
Main Authors: Ruan, H.B., Fang, L., Qin, G.P., Kong, C.Y.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Conductive films
Conductivity
Glass
Manganese
Phase detection
Radio frequency
Sputtering
X-ray scattering
Zinc oxide
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Summary:P-type conductive Zn 0.92 Mn 0.08 O:N thin films have been fabricated on quartz glass substrates by RF magnetron sputtering together with the direct implantation of N ions and post-annealing at appropriate condition. The XRD results indicate that all the films have c-axis preferred orientation, no manganese oxide or nitride phase were detected in both the as-deposited and the annealed films. The Mn-N co-doped ZnO films annealed at 650°C from 10 to 30 minutes show good p-type conductivity with the hole concentration of 10 16 - 10 17 cm -3 . Owing to electrical activation, a lot of N on substitutional sites can distribute into O site, coming into being N-Mn or N-Zn bonds as the activated acceptor which would induce low resistivity p-type conduction. The band gaps of Mn-N co-doped ZnO films are slightly lower than that of undoped ZnO film(3.29 eV).
ISSN:2159-3523
DOI:10.1109/INEC.2010.5425017