Performance of Flip-Chip Thin-Film GaN Light-Emitting Diodes With and Without Patterned Sapphires

We report on improved device performance of flip-chip (FC) GaN-based light-emitting diodes (LEDs) by combining patterned sapphire substrate (PSS) and thin-film techniques. It was found that an FC LED grown on a conventional planar sapphire exhibits a power enhancement factor of only 36.3% after the...

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Bibliographic Details
Published in:IEEE photonics technology letters 2010-04, Vol.22 (8), p.550-552
Main Authors: Horng, R.-H., Hung-Lieh Hu, Mu-Tao Chu, Yu-Li Tsai, Yao-Jun Tsai, Chen-Peng Hsu, Dong-Sing Wuu
Format: Article
Language:English
Subjects:
Conferences
Devices
Fiber optics
Flip-chip (FC)
Gallium nitride
Gallium nitrides
Light emitting diodes
Optical fibers
Optical reflection
patterned sapphire substrate (PSS)
Rough surfaces
Roughening
Sapphire
Substrates
Surface morphology
Surface roughness
Thermal conductivity
Thin film devices
thin-film technique
Transistors
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Summary:We report on improved device performance of flip-chip (FC) GaN-based light-emitting diodes (LEDs) by combining patterned sapphire substrate (PSS) and thin-film techniques. It was found that an FC LED grown on a conventional planar sapphire exhibits a power enhancement factor of only 36.3% after the thin-film processes of substrate removal and surface roughening. In contrast, the as-fabricated FC LED grown on a PSS showed a power enhancement factor of up to 62.3% without any postprocess as compared with the light output power of an original conventional FC LED. Further intensity improvement to 74.4% could be achieved for the FC LED/PSS sample with the thin-film processes.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2010.2042590