On the systematic analysis of ring-delay performance using statistical behavior model

A simple statistical behavior ring-delay model is proposed for the first time. Based on this model, the correlation between FETs' DC drive currents and AC performance (e.g., delay of ring oscillators) under different scenarios in 32 nm process technology are systematically studied. The extracte...

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Bibliographic Details
Main Authors: Liang, Q., Greene, B., Han, S.-J., Wang, Y., Liang, Y., Cai, M., Yang, F., Amarnath, K., Johnson, J., Nowak, E., Oldiges, P., Henson, W., Maciejewski, E., Narasimha, S., Leobandung, E., Angello, P.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Delay effects
FETs
Hardware
Integral equations
Inverters
Performance analysis
Predictive models
Statistical analysis
Voltage
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Summary:A simple statistical behavior ring-delay model is proposed for the first time. Based on this model, the correlation between FETs' DC drive currents and AC performance (e.g., delay of ring oscillators) under different scenarios in 32 nm process technology are systematically studied. The extracted model coefficients trend helps to gain deeper insight on the nodal voltage waveform and impacts of the FETs' DC/AC components. This model is proved to be a novel characterization technique and process monitor to bridge the AC-DC performance and provide guidelines in performance optimization.
DOI:10.1109/ISDRS.2009.5378332