Low field mobility in AlGaN/InGaN MOS-HFETs from cold-FET measurements

Low field mobility can be experimentally determined using high-frequency S-parameter measurements. The extraction procedure used is based on the capacitance-conductance method commonly used for MOSFETs and is used to estimate the low field mobility in 0.25 ¿m AlGaN/InGaN MOS-HFETs. Extraction primar...

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Bibliographic Details
Main Authors: Dandu, K., Morgensen, M., Saripalli, Y., Barlage, D.W., Johnson, M.A.L., Braddock, D.
Format: Conference Proceeding
Language:English
Subjects:
Aluminum gallium nitride
Educational institutions
Electrical resistance measurement
Equations
FETs
Materials science and technology
MOSFETs
Parasitic capacitance
Scattering parameters
Threshold voltage
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Summary:Low field mobility can be experimentally determined using high-frequency S-parameter measurements. The extraction procedure used is based on the capacitance-conductance method commonly used for MOSFETs and is used to estimate the low field mobility in 0.25 ¿m AlGaN/InGaN MOS-HFETs. Extraction primarily depends on channel conductance and charge sheet density.
DOI:10.1109/ISDRS.2009.5378109