A 77GHz 3.3V 4-channel transceiver in SiGe BiCMOS technology

We present a 77 GHz four-channel transceiver for automotive radar applications designed in a 200 GHz f T SiGe BiCMOS technology. The chip features a Tx-channel, a prescaler by 1536, and three Rx-channels. One of those Rx is in I/Q configuration. The Rx-channels show a typical conversion gain of 19 d...

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Bibliographic Details
Main Authors: Trotta, S., Dehlink, B., Ghazinour, A., Morgan, D., John, J.
Format: Conference Proceeding
Language:English
Subjects:
Automotive engineering
BiCMOS integrated circuits
bipolar technology
Gain
Germanium silicon alloys
low noise receiver
mm-wave VCO
Multi-channel
Phase noise
Radar applications
SiGe
Silicon germanium
Topology
transceiver
Transceivers
Voltage-controlled oscillators
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Summary:We present a 77 GHz four-channel transceiver for automotive radar applications designed in a 200 GHz f T SiGe BiCMOS technology. The chip features a Tx-channel, a prescaler by 1536, and three Rx-channels. One of those Rx is in I/Q configuration. The Rx-channels show a typical conversion gain of 19 dB while the NFssb is lower than 13 dB at 100 kHz. The VCO is based on a new topology which allows generating differential push-push outputs. It shows a tuning range larger than 8 GHz. The phase noise is -74dBc/Hz at 100 kHz offset. The output power is 9 dBm. At a 3.3 V supply, the chip consumes 533 mA.
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.2009.5314247