The study of light doped chromium SI-GaAs single crystal in the LEC technology

In this paper, a special technique using light doped or super-light doped (LDC or SLDC) chromium is reported with a LEC system. It is able to obtain repeatedly SI-GaAs crystals of high resistivity and mobility, and to decrease resistivity inhomogeneities substantially. A new model of the compensatio...

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Bibliographic Details
Main Authors: Jinliang Yuan, Dege Qi, Zhanping Lai, Shenjun Niu, Gengna Du, Yanfeng Liu
Format: Conference Proceeding
Language:English
Subjects:
Chromium
Conductivity
Crystalline materials
Electronics industry
Gallium arsenide
Impurities
Lighting
Microwave devices
Microwave integrated circuits
Temperature
Online Access:Request full text
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Summary:In this paper, a special technique using light doped or super-light doped (LDC or SLDC) chromium is reported with a LEC system. It is able to obtain repeatedly SI-GaAs crystals of high resistivity and mobility, and to decrease resistivity inhomogeneities substantially. A new model of the compensation mechanism for LDC and SLDC is established.
DOI:10.1109/ICSICT.1995.500178